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SiC MOSFET and SBD diodes from POTENS
Silicon Carbide (SiC) technology has opened a new era of performance, durability and efficiency in high voltage applications. SiC solutions are becoming the first choice for numerous voltage transformation and power conversion applications. SiC mosfets, thanks to their high conversion efficiency, resistance to high temperatures and small size, are gaining popularity in the power industry, electromobility, railway traction and other industries.
POTENS Semiconductor is a leading manufacturer of silicon mosfets, currently offers a new series of 650V and 1200V SiC mosfets in TO247 (3 and 4 pin) and TOLL (TOLeadLess) packages.
| P/N | Package | BVDSS | RDSON |
| PDX017C065Z | TO247-3 | 650V | 17mΩ |
| PDX030C065Z | TO247-3 | 650V | 30mΩ |
| PDX050C065Z | TO247-3 | 650V | 50mΩ |
| PDX018C120Z | TO247-3 | 1200V | 18.5mΩ |
| PDX030C120Z | TO247-3 | 1200V | 30mΩ |
| PDX040C120Z | TO247-3 | 1200V | 40mΩ |
| PDX080C120Z | TO247-3 | 1200V | 80mΩ |
| PDX150C120Z | TO247-3 | 1200V | 150mΩ |
| PDT080C120Z | TOLL | 1200V | 80mΩ |
| PDX018C120Z-F | TO247-4 | 1200V | 18.5mΩ |
| PDX030C120Z-F | TO247-4 | 1200V | 30mΩ |
| PDX040C120Z-F | TO247-4 | 1200V | 40mΩ |
| PDX080C120Z-F | TO247-4 | 1200V | 80mΩ |
SiC SBD (Silicon Carbide Schottky Barrier Diode) from POTENS are available in five packages. Currently, voltage ranges from 650 to 1700V and power from 4A to 40A. Products in table below described in blue are under development.
For quotation and technical support please contact active@maritex.com.pl or +48 58 662 05 60.
