Transistor: 2xN-MOSFET; unipolar; 20V; 8A; 0.018ohm; 2W; -55+150 deg.C; SMD; SO8
Integrated Circuit Operational Amplifier: low-noise; CH:2; 3MHz; JFET-input; ±15V; 0+70 deg.C; SMD; SO8
Integrated Circuit Operational Amplifier: low-noise; CH:4; 3MHz; JFET-input; ±15V; 0+70 deg.C; THT; PDIP14
Integrated Circuit Operational Amplifier: wide-bandwidth; CH:1; 5MHz; JFET; ±22V; 0+70 deg.C; THT; DIP8
Integrated Circuit Comparator; CH: 2; open collector; 150nA; 2-36V/±1-±18V; 0+70 deg.C; THT; DIP8
Integrated Circuit Timer astable, monostable, RC clock; 500kHz; binary; 4.5-16V; 0+70 deg.C; THT; DIP14
Microcontroller ATMEGA; 8bit AVR; 20MHz; FLASH 16kB; SRAM 1kB; EEPROM 512B; COMP; 2.7-5.5V; -40+85deg.C; TQFP32
Rectifying Diode; 200V; 1A; -65+150 deg.C; SMD; DO213AB(MELF)
Integrated Circuit Optocoupler; OUT: darlington; CH: 1; Uinsul: 3.75kV; Uce: 35V; CTR: 50%/1mA; -55+110 deg.C; SMD; MFP4(4.4x3.85mm)
Integrated Circuit Operational Amplifier: low-offset; CH:1; 0.6MHz; ±18V; 0+70 deg.C; THT; PDIP8
Transil Diode (TVS); 600W; 12V; 30.2A; unidirectional; -65+150 deg.C; SMD; DO214AA(SMB)
Logic IC Gate Digital; AND; CH:4; IN:2; CMOS 74HC; 2-6V; -40+125 deg.C; SMD; SO14
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